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Numéro de référence | MA4Z159 | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic Semiconductor | ||
Logo | |||
1 Page
Switching Diodes
MA4Z159www.DataSheet4U.com
(MA4S159)
Silicon epitaxial planar type
For switching circuits
s Features
• Small S-mini type 4-pin package
• Two isolated elements contained in one package, allowing high-
density mounting
• Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
• Short reverse recovery time trr
• Small terminal capacitance, Ct
2.1±0.1
1.3±0.1
4
3
12
0.3±0.05
5˚
Unit: mm
0.7±0.1
0.16+–00..016
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Average forward Single
current
Double
VR
VRM
IF(AV)
80
80
100
75
V
V
mA
1: Anode 1
2: Anode 2
EIAJ: SC-82
3: Cathode 2
4: Cathode 1
SMini4-F1 Package
Marking Symbol: M1B
Peak forward
Single
IFM
225
mA
current
Double
170
Internal Connection
Non-repetitive peak Single
forward surge current* Double
IFSM
500
375
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) *: t = 1 s
s Electrical Characteristics Ta = 25°C
mA
°C
°C
14
23
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 75 V
VF IF = 100 mA
VR IR = 100 µA
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
0.1
0.95 1.2
80
0.9 2
3
µA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. *: trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω Note)
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
The part number in the parenthesis shows conventional part number.
Publication date: May 2002
SKF00049AED
1
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Pages | Pages 3 | ||
Télécharger | [ MA4Z159 ] |
No | Description détaillée | Fabricant |
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