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PDF IRF8513PBF Data sheet ( Hoja de datos )

Número de pieza IRF8513PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF8513PBF Hoja de datos, Descripción, Manual

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PD - 96196
IRF8513PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET® Power MOSFET
VDSS
RDS(on) max
::30V
Q1 15.5m
Q2 12.7m
@VGS = 10V
@VGS = 10V
ID
8.0A
11A
Benefits
l Low Gate Charge and Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% Tested for RG
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
B
T! 
T! 
B! 
9
 T ÃÃ9!
 T ÃÃ9!
 T ÃÃ9!
SO-8
Description
The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard
SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation
including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make
this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook
and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Q1 Max.
8.0
6.2
64
1.5
1.05
0.01
30
± 20
Q2 Max.
11
9.0
88
2.4
1.68
0.02
-55 to + 175
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
42
100
Q2 Max.
42
62.5
Units
°C/W
Notes  through … are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/05/08

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IRF8513PBF pdf
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Q1 - Control FET
2.0
ID = 8.0A
VGS = 10V
1.5
Typical Characteristics
2.0
IRF8513PbF
Q2 - Synchronous FET
ID = 11A
VGS = 10V
1.5
1.0 1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100
10 TJ = 175°C
TJ = 175°C
10
TJ = 25°C
VGS = 0V
1.0
0.2 0.8 1.4 2.0 2.6 3.2 3.8
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
50
45 ID = 8.0A
40
35
30
25 TJ = 125°C
20
15 TJ = 25°C
10
2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
www.irf.com
TJ = 25°C
VGS = 0V
1.0
0.1 0.7 1.3 1.9 2.5 3.1 3.7 4.3
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
30
ID = 11A
25
20
TJ = 125°C
15
TJ = 25°C
10
2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
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IRF8513PBF arduino
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IRF8513PbF
Orderable part number
IRF8513PbF
IRF8513TRPbF
Package Type
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Qualification Information
Qualification level
Moisture Sensitivity Level
RoHS Compliant
Consumer ††
(per JEDEC JESD47F††† guidelines)
SO-8
MSL1
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site http://ww.irf.com
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 2.4mH, RG = 25, IAS = 6.4A (Q1) &
L = 1.87mH, RG = 25, IAS = 8.6A(Q2)
ƒ Pulse width 400µs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/2008
www.irf.com
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