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IRF8721PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF8721PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF8721PBF fiche technique
www.DataSheet4U.com
PD - 97119
IRF8721PbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
HEXFET® Power MOSFET
VDSS RDS(on) max
Qg
30V 8.5m:@VGS = 10V 8.3nC
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l Very Low Gate Charge
l Low RDS(on) at 4.5V VGS
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
S1
S2
S3
G4
AA
8D
7D
6D
5D
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
Description
Top View
SO-8
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
30
± 20
14
11
110
2.5
1.6
V
A
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/30/07

PagesPages 9
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