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PDF IRF8788PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF8788PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97137A
IRF8788PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
30V 2.8m:@VGS = 10V 44nC
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Description
The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry
standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in
synchronous buck operation including Rds(on) and gate charge to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Max.
30
±20
24
19
190
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
1
8/18/08
1 page  
www.DataSheet4U.com
IRF8788PbF
24
20
16
12
8
4
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
2.5
ID = 250μA
2.0
ID = 100μA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
Ri (°C/W) τι (sec)
0.0141064 0.000057
0.0210000 0.000286
τJ
R1R1 R2R2 R3R3 R4R4 R5R5 R6R6 R7R7 R8R8
0.2184000
0.8204000
τJ τa 4.7558194
τ1
τ1
τ2 τ3 τ4 τ5 τ6 τ7 τ8 0.4648000
τ2 τ3 τ4 τ5 τ6 τ7 τ8 28.9076170
0.000375
0.001902
0.004544
0.013931
0.038563
SINGLE PULSE
( THERMAL RESPONSE )
CiC=iτi/Ri/iRi
15.1191958 2.069546
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF8788PBF.PDF ] | |
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