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Numéro de référence | IRFH7932PBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
VDSS
30V
IRFH7932PbF
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.3m @VGS = 10V 34nC
D
D
D
D
PQFN
S
S
S
G
Orderable part number
IRFH7932TRPbF
IRFH7932TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
gRθJA Junction-to-Ambient
Max.
30
± 20
25
20
104
200
3.4
2.2
0.03
-55 to + 150
Typ.
–––
–––
Max.
2.2
37
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through
are on page 10
1 www.irf.com © 2014 International Rectifier
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August 11, 2014
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Pages | Pages 10 | ||
Télécharger | [ IRFH7932PBF ] |
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