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PDF KI4558DY Data sheet ( Hoja de datos )
| Número de pieza | KI4558DY | |
| Descripción | Complementary Power Trench MOSFET | |
| Fabricantes | KEXIN | |
| Logotipo |  |
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SMD Type
Complementary Power Trench MOSFET
SI4558DY (KI4558DY)
MOSFET
■ Features
● N-Channel：VDS=30V ID=6A
● RDS(ON) ＜ 40mΩ (VGS = 10V)
● RDS(ON) ＜ 60mΩ (VGS = 4.5V)
● P-Channel：VDS=-30V ID=-6A
● RDS(ON) ＜ 40mΩ (VGS =-10V)
● RDS(ON) ＜ 70mΩ (VGS =-4.5V)
SOP-8
1.50 0.15
1 Source1
2 Gate1
3 Source2
4 Gate2
5 Drain
6 Drain
7 Drain
8 Drain
D
S2 S1
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current @ TJ=150℃ (Note.1)
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient (Note.1)
Junction Temperature
Storage Temperature Range
Ta = 25 ℃
Ta = 70 ℃
Ta = 25 ℃
Ta = 70 ℃
Note.1:Surface Mounted on FR4 Board, t ≤ 10 sec.
G2 G1
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
N-Channel P-Channel
30 -30
±20
6 -6
4.7 -4.7
30 -30
2.4
1.5
52
150
-55 to 150
Unit
V
A
W
℃/W
℃
■ Marking
Marking
4558
KA****
www.kexin.com.cn 1
1 page  
SMD Type
MOSFET
Complementary Power Trench MOSFET
SI4558DY (KI4558DY)
■ P-MOSFET Typical Characterisitics
Output Characteristics
30
30
VGS = 10, 9, 8, 7, 6, 5 V
24
24
Transfer Characteristics
TC = –55 C
25 C
18 18 125 C
4V
12 12
6
0
0
0.20
3V
2468
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
6
0
0
2000
12345
VGS – Gate-to-Source Voltage (V)
Capacitance
6
0.15
1500
Ciss
0.10
0.05
VGS = 4.5 V
VGS = 10 V
0
0 6 12 18 24
ID – Drain Current (A)
Gate Charge
10
8
VDS = 15 V
ID = 6 A
6
4
2
0
0 5 10 15 20
Qg – Total Gate Charge (nC)
30
25
1000
Coss
500
Crss
0
0 6 12 18 24 30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.8
VGS = 10 V
1.6 ID = 6 A
1.4
1.2
1.0
0.8
0.6
0.4
–50
0 50 100
TJ – Junction Temperature ( C)
150
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KI4558DY.PDF ] | |
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