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F25L004A fiches techniques PDF

Elite Semiconductor - 4Mbit (512Kx8) 3V Only Serial Flash Memory

Numéro de référence F25L004A
Description 4Mbit (512Kx8) 3V Only Serial Flash Memory
Fabricant Elite Semiconductor 
Logo Elite Semiconductor 





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F25L004A fiche technique
ESMTwww.DataSheet4U.com
F25L004A
4Mbit (512Kx8)
3V Only Serial Flash Memory
„ FEATURES
y Single supply voltage 2.7~3.6V
y Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 75MHz; 100MHz
y Low power consumption
- typical active current
- 15 μ A typical standby current
y Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y Program
- Byte program time 7 μ s(typical)
y Erase
- Chip erase time 4s(typical)
- Sector erase time 60ms(typical),
block erase time 1sec (typical)
ORDERING INFORMATION
Part No.
Speed
Package
COMMENTS
F25L004A -50PG
50MHz
8 lead
SOIC
150 mil
Pb-free
F25L004A -100PG 100MHz
8 lead
SOIC
150 mil
Pb-free
F25L004A -50PAG 50MHz
8 lead
SOIC
200 mil
Pb-free
y Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Byte-Program operations
y SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
y End of program or erase detection
y Write Protect ( WP )
y Hold Pin ( HOLD )
y Package available
- 8-pin SOIC 150-mil
- 8-pin SOIC 200-mil
Part No.
Speed
Package
COMMENTS
F25L004A –100PAG 100MHz
8 lead
SOIC
200 mil
Pb-free
F25L004A –50DG 50MHz
8 lead
PDIP
300 mil
Pb-free
F25L004A –100DG 100MHz
8 lead
PDIP
300 mil
Pb-free
GENERAL DESCRIPTION
The F25L004A is a 4Megablt, 3V only CMOS Serial Flash
memory device organized as 512K bytes of 8 bits. This device is
packaged in 8-lead SOIC 200mil. ESMT’s memory devices
reliably store memory data even after 100,000 program and
erase cycles.
The F25L004A features a sector erase architecture. The device
memory array is divided into 128 uniform sectors with 4K byte
each ; 8 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2007
Revision: 1.2 1/32

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