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PDF IRLR8203PBF Data sheet ( Hoja de datos )

Número de pieza IRLR8203PBF
Descripción SMPS MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 95095A
SMPS MOSFET
IRLR8203PbF
IRLU8203PbF
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
6.8m
ID
110A„
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR8203PbF
I-Pak
IRLU8203PbF
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
110 „
76 „
120
140
69
0.92
-55 to + 175
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.09
50
110
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
12/06/04

1 page




IRLR8203PBF pdf
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120
LIMITED BY PACKAGE
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRLR/U8203PbF
VDS
VGS
RG
RD
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+TC
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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