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PDF NJG1119PB4 Data sheet ( Hoja de datos )
| Número de pieza | NJG1119PB4 | |
| Descripción | Dual LNA | |
| Fabricantes | JRC | |
| Logotipo |  |
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NJG1119PB4
W-CDMA Dual LNA GaAs MMIC
QGENERAL DESCRIPTION
QPACKAGE OUTLINE
The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA
cellular phone of 2.1GHz and 800MHz band.
This IC has a LNA pass-through function to select high gain mode
or low gain mode.
An ultra small and ultra thin package of FFP12–B4 is adopted.
NJG1119PB4
QFEATURES
OLow voltage operation
+2.7V
OLow current consumption
2.4mA typ. @2.1GHz band (High Gain Mode)
2.0mA typ. @800MHz band (High Gain Mode)
4uA typ. @800MHz / 2.1GHz band (Low Gain Mode)
OSmall package
FFP12-B4 (Package size: 2.0 x 2.0 x 0.65mm typ)
[High gain mode]
OHigh gain
OLow noise figure
OHigh Input IP3
[Low gain mode]
OGain
OLow noise figure
OHigh Input IP3
14.5dB typ. @fRF =2140MHz16.0dB typ. @fRF =885MHz
1.7dB typ. @fRF=2140MHz
1.45dB typ. @fRF =885MHz
-3.5dBm typ. @ fRF=2140.0+2140.1MHz, Pin=-36dBm
-3.5dBm typ. @fRF=885.0+885.1MHz, Pin=-36dBm
-4.0dB typ. @fRF=2140MHz
-4.5dB typ. @fRF=885MHz
4.0dB typ. @fRF=2140MHz
4.5dB typ. @fRF=885MHz
+2.5dBm typ. @fRF=2140.0+2140.1MHz, Pin=-20dBm
+2.0dBm typ. @fRF=885.0+885.1MHz, Pin=-20dBm
QPIN CONFIGURATION
(Top View)
VINV 9
VCTL1 8
GND 7
RFIN2
10
GND
11
RFIN1
12
2.1GHz Band
RFOUT2
6
GND
5
800MHz Band
RFOUT1
4
GND 1
VCTL2 2 EXTCAP 3
Pin Connection
1. GND
2. VCTL2
3. EXTCAP
4. RFOUT1 (800MHz band)
5. GND
6. RFOUT2 (2.1GHz band)
7. GND
8. VCTL1
9. VINV
10. RFIN2 (2.1GHz band)
11. GND
12. RFIN1 (800MHz band)
Note: Specifications and description listed in this catalog are subject to change without prior notice.
Ver.2005-08-29
-1-
1 page  
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QTERMINAL INFORMATION
NJG1119PB4
No. SYMBOL
DESCRIPTION
1 GND Ground terminal. (0V)
2
VCTL2
Control voltage supply terminal. The high level voltage of this terminal selects High
Gain Mode. The low level voltage of this terminal selects Low Gain Mode.
3 EXTCAP An external bypass capacitor is required. (Please refer to TEST CIRCUIT.)
4
RFOUT1
Output terminal of 800MHz band. This terminal is also the power supply terminal of the
LNA, please use inductor (L3) to connect power supply.
5 GND Ground terminal. (0V)
6
RFOUT2
Output terminal of 2.1GHz band. This terminal is also the power supply terminal of the
LNA, please use inductor (L7) to connect power supply.
7 GND Ground terminal. (0V)
8
VCTL1
Control voltage supply terminal. The high level voltage of this terminal selects
800MHz.band. The low level voltage of this terminal selects 2.1GHz band.
9 VINV Inverter voltage supplies terminal.
10
RFIN2
RF input terminal of 2.1GHz band. The RF signal is input through external matching
circuit connected to this terminal. The DC blocking capacitor is not required.
11 GND Ground terminal. (0V)
12
RFIN1
RF input terminal of 800MHz band. The RF signal is input through external matching
circuit connected to this terminal. The DC blocking capacitor is not required.
CAUTION
1) Ground terminal (No.1, 5, 7, 11) should be connected to the ground plane as low inductance as possible.
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QELECTRICAL CHARACTERISTICS 6(2.1GHz band Low Gain Mode)
NJG1119PB4
Gain vs. Temperature
(f=2140M Hz, V =V =2.7V, V 1=0V, V 2=0V)
DD INV
CTL
CTL
-3
10
-4 Gain
9
-5 8
-6 7
-7 6
NF
-8 5
-9 4
-10 3
-11
-50
0 50
Temperature (oC)
2
100
P-1dB(IN) vs. Temperature
(f=2140MHz, V =V =2.7V, V 1=0V, V 2=0V)
DD INV
CTL
CTL
18
16
14
12 P-1dB(IN)
10
8
6
4
-50 0 50 100
Temperature (oC)
IDD vs. Temperature
(V =V =2.7V, V 1=0V, V 2=0V, PRF=OFF)
DD INV
CTL
CTL
30
25
20
15
10 IDD
5
0
-50 0 50 100
Temperature (oC)
OIP3, IIP3 vs. Temperature
(f=2140+2140.1MHz, Pin=-20dBm, V =V =2.7V, V 1=0V, V 2=0V)
DD INV
CTL
CTL
10 25
5
OIP3
0
20
15
-5 10
-10 5
IIP3
-15 0
-20
-50
0 50
Temperature (oC)
-5
100
VSWR vs. Temperature
(f=2140MHz, V =V =2.7V, V 1=0V, V 2=0V)
DD INV
CTL
CTL
4
3.5 VSWRi
3 VSWRo
2.5
2
1.5
1
0.5
0
-50 0 50 100
Temperature (oC)
- 11 -
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| PDF Descargar | [ Datasheet NJG1119PB4.PDF ] | |
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