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PDF NX3L1G53 Data sheet ( Hoja de datos )
| Número de pieza | NX3L1G53 | |
| Descripción | Low-ohmic Single-pole Double-throw Analog Switch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX3L1G53
Low-ohmic single-pole double-throw analog switch
Rev. 03 — 17 April 2009
Product data sheet
1. General description
The NX3L1G53 provides one low-ohmic single-pole double-throw analog switch, suitable
for use as an analog or digital multiplexer/demultiplexer. It has a digital select input (S),
two independent inputs/outputs (Y0, Y1), a common input/output (Z) and an active LOW
enable input (E). When pin E is HIGH, the switch is turned off. Schmitt-trigger action at the
select input (S) and enable input (E) makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 1.4 V to 4.3 V.
The NX3L1G53 allows signals with amplitude up to VCC to be transmitted from Z to Y0 or
Y1; or from Y0 or Y1 to Z. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures
minimal attenuation and distortion of transmitted signals.
2. Features
I Wide supply voltage range from 1.4 V to 4.3 V
I Very low ON resistance (peak):
N 1.6 Ω (typical) at VCC = 1.4 V
N 1.0 Ω (typical) at VCC = 1.65 V
N 0.55 Ω (typical) at VCC = 2.3 V
N 0.50 Ω (typical) at VCC = 2.7 V
N 0.50 Ω (typical) at VCC = 4.3 V
I Break-before-make switching
I High noise immunity
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 7500 V
N MM JESD22-A115-A exceeds 200 V
N CDM AEC-Q100-011 revision B exceeds 1000 V
I CMOS low-power consumption
I Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
I Direct interface with TTL levels at 3.0 V
I Control input accepts voltages above supply voltage
I High current handling capability (350 mA continuous current under 3.3 V supply)
I Specified from −40 °C to +85 °C and from −40 °C to +125 °C
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NX3L1G53
Low-ohmic single-pole double-throw analog switch
9. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC supply voltage
VI input voltage
select input S and enable input E
VSW switch voltage
IIK input clamping current VI < −0.5 V
ISK switch clamping current VI < −0.5 V or VI > VCC + 0.5 V
ISW switch current
VSW > −0.5 V or VSW < VCC + 0.5 V;
source or sink current
−0.5
[1] −0.5
[2] −0.5
−50
-
-
+4.6
V
+4.6
V
VCC + 0.5 V
- mA
±50 mA
±350
mA
VSW > −0.5 V or VSW < VCC + 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
-
±500
mA
Tstg storage temperature
Ptot total power dissipation Tamb = −40 °C to +125 °C
−65
[3] -
+150
250
°C
mW
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3] For XSON8, XSON8U and XQFN8U packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
10. Recommended operating conditions
Table 6. Recommended operating conditions
Symbol Parameter
Conditions
VCC
VI
VSW
Tamb
∆t/∆V
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
select input S and enable input E
VCC = 1.4 V to 4.3 V
Min
1.4
0
[1] 0
−40
[2] -
Max
4.3
4.3
VCC
+125
200
Unit
V
V
V
°C
ns/V
[1] To avoid sinking GND current from terminal Z when switch current flows in terminal Yn, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Yn. In this case, there is no limit
for the voltage drop across the switch.
[2] Applies to control signals.
NX3L1G53_3
Product data sheet
Rev. 03 — 17 April 2009
© NXP B.V. 2009. All rights reserved.
5 of 23
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NX3L1G53
Low-ohmic single-pole double-throw analog switch
1.0
RON
(Ω)
0.8
001aag569
1.0
RON
(Ω)
0.8
001aaj896
0.6 0.6 (1)
(1) (2)
(2) (3)
(3) (4)
0.4 (4) 0.4
0.2 0.2
0
01234
VI (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig 14. ON resistance as a function of input voltage;
VCC = 3.3 V
12. Dynamic characteristics
0
012345
VI (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig 15. ON resistance as a function of input voltage;
VCC = 4.3 V
Table 9. Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 18.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min Typ[1] Max Min
Max
Max
(85 °C) (125 °C)
ten enable time
S or E to Z or Yn;
see Figure 16
tdis disable time
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 3.6 V to 4.3 V
S or E to Z or Yn;
see Figure 16
- 28 42
- 23 34
- 17 27
- 15 24
- 15 24
-
-
-
-
-
45 50 ns
37 41 ns
29 31 ns
26 28 ns
26 28 ns
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 2.7 V to 4.3 V
- 10 19
- 7 14
- 59
- 48
- 48
-
-
-
-
-
21 23 ns
16 17 ns
10 11 ns
9 9 ns
9 9 ns
NX3L1G53_3
Product data sheet
Rev. 03 — 17 April 2009
© NXP B.V. 2009. All rights reserved.
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