|
|
PDF LA6H0912-500 Data sheet ( Hoja de datos )
| Número de pieza | LA6H0912-500 | |
| Descripción | LDMOS Avionics Radar Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LA6H0912-500 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 01 — 5 March 2009
www.datasheet4u.com
1. Product profile
Objective data sheet
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the
960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 128 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(MHz)
VDS PL
Gp
ηD tr
tf
(V) (W) (dB) (%) (ns) (ns)
pulsed RF
960 to 1200
50 500 17
50 20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply
voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %:
N Output power = 500 W
N Power gain = 17 dB
N Efficiency = 50 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (960 MHz to 1215 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1 page  
NXP Semiconductors
8. Package outline
www.datasheet4u.com
Flanged ceramic package; 2 mounting holes; 2 leads
BLA6H0912-500
LDMOS avionics radar power transistor
SOT634A
D
A
F
3
D1
U1 B
qC
c
L1
U2
AL
2
b
p
w1 M A M B M
E1
E
w2 M C M
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A b c D D1 E E1 F L p Q q U1 U2 w1 w2
mm 4.83
3.68
inches 0.190
0.145
12.82 0.15 22.58 22.56
12.57 0.08 22.12 22.15
0.505 0.006 0.889 0.888
0.495 0.003 0.871 0.872
13.34 13.34
13.08 13.08
0.525 0.525
0.515 0.515
1.14
0.89
0.045
0.035
5.33
4.32
0.210
0.170
3.38 1.70 27.94
3.12 1.45
0.133 0.067 1.100
0.123 0.057
34.16 13.84
33.91 13.59
1.345 0.545
1.335 0.535
0.25 0.51
0.010 0.020
OUTLINE
VERSION
SOT634A
IEC
REFERENCES
JEDEC
JEITA
Fig 2. Package outline SOT634A
BLA6H0912-500_1
Objective data sheet
Rev. 01 — 5 March 2009
EUROPEAN
PROJECTION
ISSUE DATE
01-11-27
03-05-01
© NXP B.V. 2009. All rights reserved.
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet LA6H0912-500.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LA6H0912-500 | LDMOS Avionics Radar Power Transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |