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PDF ZXGD3004E6 Data sheet ( Hoja de datos )

Número de pieza ZXGD3004E6
Descripción 8A(peak) gate driver
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo



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No Preview Available ! ZXGD3004E6 Hoja de datos, Descripción, Manual

ZXGD3004E6
8A(peak)www.datasheet4u.com gate driver in SOT23-6
General description
The ZXGD3004E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 8A into
a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay
times down to ~1ns and rise/fall times down to 14ns this device ensures rapid switching of the power
MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications.
The ZXGD3004E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage range
allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases board
layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
• 40V operating voltage range
• 8 amps peak output current
• Fast switching emitter-follower configuration
• 1ns propagation delay time
• 14ns rise/fall time, 1500pF load
• Low input current requirement
• 1.9A(source)/1.9A(sink) output current from 10mA input
• SOT23-6 package
• Separate source and sink outputs for independent control of rise and fall time
• Optimized pin-out to ease board layout and minimize trace inductance
• No Latch Up
• No shoot through
• Near - Zero quiescent and output leakage current
Typical application circuit
VS
Input
VCC
VCC
IN1
ZXGD3004
SOURCE
IN2 SINK
GND
Issue 1 - October 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com

1 page




ZXGD3004E6 pdf
ZXGD3004E6
Typical gate driver characteristics
www.datasheet4u.com
T = 25°C
A
100 V = 15V
CC
V = 12.5V
IN
R = 25
S
R = 0.1
L
10
Fall Time
Rise Time
T = 25°C
A
V = 15V
10 CC
V = 12.5V
IN
R = 25
S
R = 0.1
L
1
Delay Rising
Delay Falling
0.1 1 10
C Capacitive Load (nF)
L
Rise and Fall Time
100
0.1 1 10
C Capacitive Load (nF)
L
Propagation Delay
100
T = 25°C
A
6 V = 15V
CC
5
V = 12.5V
IN
R = 25
4
S
R = 0.1
L
3
Falling
Rising
2
1
0
100m
1
10
C Capacitive Load (nF)
L
Peak Drive Current
100
16
V
IN
12
8
4
0
T = 25°C
A
V = 15V
CC
V = 12.5V
IN
R = 25
S
C = 1.5nF
L
R = 0.1
L
V
OUT
0 100 200 300 400 500 600 700 800
Time (ns)
Switching Speed
100 Duty Cycle = 50%
10
1
0.1
0.1
250KHz
100KHz
T = 25°C
A
V = 15V
CC
V = 12.5V
IN
R = 25
S
R = 0.1
L
1 10
C Capacitive Load (nF)
L
Supply Current
100
16
12
8
4
0
0
V
IN
T = 25°C
A
V = 15V
CC
V = 12.5V
IN
R = 1000
S
C = 1.5nF
L
R = 0.1
L
V
OUT
200 400 600
Time (ns)
800 1000
Switching Speed
Issue 1 - October 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com

5 Page










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