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PDF LET9006 Data sheet ( Hoja de datos )
| Número de pieza | LET9006 | |
| Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LET9006 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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LET9006
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 6 W with 17 dB gain @ 960 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The LET9006 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications
requiring high linearity.
PowerFLAT™(5x5)
ORDER CODE
LET9006
BRANDING
9006
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
Value
65
-0.5 to +15
1
16
150
-65 to +150
Unit
V
V
A
W
°C
°C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
5 °C/W
April, 15 2003
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LET9006.PDF ] | |
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