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PDF LET8180 Data sheet ( Hoja de datos )
| Número de pieza | LET8180 | |
| Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LET8180 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
LET8180
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION,
PUSH-PULL
• POUT = 220 W with 17 dB TYP. gain @ 860 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET8180 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET8180 is designed for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
M252
epoxy sealed
ORDER CODE
LET8180
BRANDING
LET8180
PIN CONNECTION
12
3
54
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc =+70 °C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
Value
65
-0.5 to +15
18
289
200
-65 to +150
0.45
Unit
V
V
A
W
°C
°C
°C/W
January, 28 2003
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LET8180.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| LET8180 | RF POWER TRANSISTORS Ldmos Enhanced Technology | STMicroelectronics |
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