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Número de pieza | LET20015 | |
Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LET20015 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! LET20015
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 15 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
• IS-97 CDMA PERFORMANCES
POUT = 2.5 W
EFF. = 20 %
DESCRIPTION
The LET20015 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2 GHz. LET20015 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. LET20015’s
superior linearity performance makes it an ideal
solution for base station applications.
PowerSO-10RF
(formed lead)
ORDER CODE
LET90015
BRANDING
LET90015
PIN CONNECTION
SOURCE
GATE
DRAIN
The PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved, high
power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS
Power Dissipation (@ Tc = 70 °C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA (TCASE = 70 °C)
Rth(j-c) Junction -Case Thermal Resistance
February, 27 2003
Value
65
-0.5 to +15
2
TBD
165
-65 to +175
TBD
Unit
V
V
A
W
°C
°C
°C/W
1/5
1 page LET20015
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet LET20015.PDF ] |
Número de pieza | Descripción | Fabricantes |
LET20015 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | STMicroelectronics |
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