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Infineon Technologies AG - SPP11N60S5

Numéro de référence 11N60S5
Description SPP11N60S5
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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11N60S5 fiche technique
Cool MOS™ Power Transistor
www.daFtaeshaeteut4rue.com
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SPP11N60S5, SPB11N60S5
SPI11N60S5
P-TO262
VDS
RDS(on)
ID
600
0.38
11
V
A
P-TO263-3-2
P-TO220-3-1
2
P-TO220-3-1
123
Type
SPP11N60S5
SPB11N60S5
SPI11N60S5
Package
P-TO220-3-1
P-TO263-3-2
P-TO262
Ordering Code
Q67040-S4198
Q67040-S4199
Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 5.5 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
11
7
22
340
0.6
11
±20
±30
125
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30

PagesPages 12
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