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LED55B fiches techniques PDF

Fairchild Semiconductor - GaAs INFRARED EMITTING DIODE

Numéro de référence LED55B
Description GaAs INFRARED EMITTING DIODE
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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LED55B fiche technique
GaAs INFRARED EMITTING DIODE
LED55B
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
LED55C
LED56
0.030 (0.76)
NOM
0.255 (6.48)
1.00 (25.4)
MIN
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
0.040 (1.02)
13
0.040 (1.02)
45°
Ø0.020 (0.51) 2X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
1
DESCRIPTION
The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
2001 Fairchild Semiconductor Corporation
DS300312 6/05/01
1 OF 4
www.fairchildsemi.com

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