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PDF LBCW68GLT1G Data sheet ( Hoja de datos )
| Número de pieza | LBCW68GLT1G | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
PNP Silicon
We declare that the material of product compliance with RoHS requirements.
LBCW68GLT1G
ORDERING INFORMATION
Device
Marking
LBCW68GLT1G
DG
LBCW68GLT3G
DG
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
Collector Current — Continuous I C
Value
– 45
– 60
– 5.0
– 800
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 )
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 )
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
Collector Cutoff Current
(VCE = –45 Vdc, I E= 0 )
(VCE = –45 Vdc, I B= 0 , TA = 150°C)
Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CES
I EBO
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min Typ
– 45
– 60
– 5.0
—
—
—
——
——
——
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
— Vdc
— Vdc
— Vdc
– 20 nAdc
– 10 µAdc
– 20 nAdc
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LBCW68GLT1G.PDF ] | |
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