PDF LBC858BWT1 Data sheet ( Hoja de datos )

Número de pieza	LBC858BWT1
Descripción	(LBC85xxWT1) General Purpose Transistors PNP Silicon
Fabricantes	Leshan Radio Company
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No Preview Available ! LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max Unit 150 mW 833 –55 to +150 °C/W °C DEVICE MARKING LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F; LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series Collector–Base Breakdown Voltage (IC = – 10 µA) LBC856 Series LBC857 Series LBC858 Series Emitter–Base Breakdown Voltage (IE = – 1.0 µA) LBC856 Series LBC857 Series LBC858 Series Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO – 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.0 – 5.0 – 5.0 — — Typ — — — — — — — — — — — — — — LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1 CWT1 3 1 2 SOT– 323 / SC-70 1 BASE 3 COLLECTOR 2 EMITTER Max Unit — — — — — — — — — — — — – 15 – 4.0 v v v v nA µA K6–1/6 1 page LESHAN RADIO COMPANY, LTD. www.datasheet4u.com LBC856AWT1, BWT1 LBC857AWT1, BWT1, LBC858AWT1, BWT1, CWT1 1.0 0.7 D=0.5 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.05 0.01 0.1 0.2 0.5 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) 1.0 2.0 5.0 10 20 50 100 t, TIME (ms) Figure 13. Thermal Response 200 500 1.0k 2.0k 5.0k 10k –200 –100 –50 –10 –5.0 –2.0 –1.0 1s 3 ms TA= 25°C TJ= 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calcu- lated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the sec- ondary breakdown. –0.5 –10 –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area K6–5/6 5 Page

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