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PDF LBC848BPDW1T1 Data sheet ( Hoja de datos )
| Número de pieza | LBC848BPDW1T1 | |
| Descripción | (LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LBC848BPDW1T1 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNPwww.datasheet4u.com Duals (Complimentary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
• Device Marking:
LBC846BPDW1T1 = BB
LBC847BPDW1T1 = 13F
LBC847CPDW1T1 = 13G
LBC848BPDW1T1 = 13K
LBC848CPDW1T1 = 13L
LBC846BPDW1T1
LBC847BPDW1T1
LBC847CPDW1T1
LBC848BPDW1T1
LBC848CPDW1T1
6
5
4
1
2
3
SOT-363/SC-88
CASE 419B STYLE 1
MAXIMUM RATINGS - NPN
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Ð
Continuous
VCEO
65
45
30
V
VCBO
80
50
30
V
VEBO 6.0 6.0 5.0
V
IC 100 100 100 mAdc
MAXIMUM RATINGS - PNP
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Ð
Continuous
VCEO
VCBO
VEBO
IC
-65
-80
-5.0
-100
-45
-50
-5.0
-100
-30
-30
-5.0
-100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR-5 Board (1)
TA = 25˚C
Derate Above 25˚C
PD
Thermal Resistance,
Junction to Ambient
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR-5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
-55 to +150
Unit
mW
mW/˚C
˚C/W
˚C
3 21
Q1 Q2
45
6
DEVICE MARKING
See Table
ORDERING INFORMATION
Device
Package
Shipping
LBC846BPDW1T1 SOT-363 3000 Units/Reel
LBC847BPDW1T1 SOT-363 3000 Units/Reel
LBC847CPDW1T1 SOT-363 3000 Units/Reel
LBC848BPDW1T1 SOT-363 3000 Units/Reel
LBC848CPDW1T1 SOT-363 3000 Units/Reel
LBC846BP - 1/9
1 page  
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1, LBC847BPDW1T1 Series, LBC848BPDW1T1 Series
www.datasheet4u.com
TYPICAL PNP CHARACTERISTICS — LB C846
VCE = -5.0 V
TA = 25°C
2.0
1.0
0.5
-1.0
TJ = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
-0.2
0
-0.2
VCE(sat) @ IC/IB = 10
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
-2.0
-1.6
IC =
-1.2 -10 mA
-20 mA
-50 mA -100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02 -0.05 -0.1
-0.2 -0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0 -10 -20
Figure 9. Collector Saturation Region
-1.0
-1.4
-1.8 θVB for VBE
-2.2
-55°C to 125°C
-2.6
-3.0
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
40
TJ = 25°C
20 Cib
10
8.0
6.0 Cob
4.0
2.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
-50 -100
500 VCE = -5.0 V
200
100
50
20
-1.0 -10 -100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
LBC846BP–5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet LBC848BPDW1T1.PDF ] | |
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