DataSheetWiki


LBC846AWT1 fiches techniques PDF

Leshan Radio Company - (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon

Numéro de référence LBC846AWT1
Description (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





1 Page

No Preview Available !





LBC846AWT1 fiche technique
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
www.datashePetb4u.Fcroeme Package May be Available. The G.Suffix Denotes a
Pb– Free Lead Finish
ORDERING INFORMATION ( Pb– Free )
Device
Package
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G,CWT1G
LBC848AWT1G,BWT1G,CWT1G
SOT-323
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
V CEO
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
LBC846AWT1,BWT1
LBC847AWT1,BWT1
CWT1
LBC848AWT1,BWT1
CWT1
3
1
2
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
PD
R θJA
PD
T J , T stg
Max Unit
150 mW
833
2.4
–55 to +150
°C/W
mW/°C
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1 = 1A; LBC846BWT1 = 1B; LBC847AWT1 = 1E; LBC847BWT1 = 1F;
LBC847CWT1 = 1G; LBC848AWT1 = 1J; LBC848BWT1 = 1K; LBC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Base Breakdown Voltage
(IC = 10 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
Typ Max Unit
——
— —v
——
——
— —v
——
——
— —v
——
——
— —v
——
— 15 nA
— 5.0 µA
K5–1/5

PagesPages 5
Télécharger [ LBC846AWT1 ]


Fiche technique recommandé

No Description détaillée Fabricant
LBC846AWT1 (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon Leshan Radio Company
Leshan Radio Company
LBC846AWT1G General Purpose Transistors Leshan Radio Company
Leshan Radio Company
LBC846AWT3G General Purpose Transistors Leshan Radio Company
Leshan Radio Company

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche