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PDF LBC807WT1 Data sheet ( Hoja de datos )
| Número de pieza | LBC807WT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
www.datasheet4u.com
General Purpose Transistors
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
1
BASE
3
COLLECTOR
2
EMITTER
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
LBC807WT1
3
1
2
SOT–323 /SC-70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
DEVICE MARKING
LBC807WT1 = 5A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, I C = –10µA)
Emitter–Base Breakdown Voltage
(IE = –1.0 µA)
Collector Cutoff Current
(VCB = –20 V)
(VCB = –20 V, T J = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CBO
–45
–50
–5.0
—
—
Typ Max Unit
— —V
— —V
— —V
—
–100
nA
— –5.0 µA
LBC807WT1–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LBC807WT1.PDF ] | |
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