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PDF HMC719LP4 Data sheet ( Hoja de datos )
| Número de pieza | HMC719LP4 | |
| Descripción | Low Noise Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v02.1008
5
www.datashTeeyt4pui.ccoaml Applications
The HMC719LP4(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Access Points
• Test Equipment & Military
Functional Diagram
HMC719LP4 / 719LP4E
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
Features
Noise Figure: 1.0 dB
Gain: 34 dB
Output IP3: +39 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4 mm SMT Package: 16 mm2
General Description
The HMC719LP4(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.3 and 2.9 GHz. The amplifier
has been optimized to provide 1.0 dB noise figure,
34 dB gain and +39 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC719LP4(E) shares the same package and pinout
with the HMC718LP3(E) 600 - 1400 MHz LNA. The
HMC719LP4(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
5 - 344
Electrical Specifications, TA = +25°C, Rbias = 1.5k Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Total Supply Current (Idd)
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
1.3 - 2.2
2.2 - 2.9
27 32
22 26.5
0.02
0.02
1.0 1.3
1.3 1.6
16 13.5
10.5
9.5
12.5 15.5
12.5 15.5
18
32
187 220
18.5
31
187
220
Vdd = +5V
Units
Min. Typ. Max. Min. Typ. Max.
1.3 - 2.2
2.2 - 2.9
GHz
29 35
24 28
dB
0.02
0.02
dB/ °C
0.95 1.2
1.25 1.6
dB
17.5
16.5
dB
13.5
11.5 dB
18 21.5
18 21.5
dBm
23
39
272 315
23 dBm
39 dBm
272 315 mA
* Rbias resistor sets current, see application circuit herein, Vdd = Vdd1 = Vdd2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v02.1008
HMC719LP4 / 719LP4E
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
5
www.datashOeeut4tup.cuomt IP3 vs. Rbias @ 1900 MHz
40
Gain, Noise Figure & Rbias @ 1900 MHz
35 1.8
38 33 1.6
36 31 1.4
34
32
30
1
Vdd=3V
Vdd=5V
10 100 1000
Rbias (Ohms)
10000
29
27
25
100
Vdd=3V
Vdd=5V
1000
Rbias (Ohms)
1.2
1
0.8
10000
5 - 348
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC719LP4.PDF ] | |
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