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PDF HMC717LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC717LP3 | |
| Descripción | Low Noise Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v01.1008
5
www.datashTeeyt4pui.ccoaml Applications
The HMC717LP3(E) is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functional Diagram
HMC717LP3 / 717LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Features
Noise Figure: 1.1 dB
Gain: 16.5 dB
Output IP3: +31.5 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC717LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
16.5 dB gain and +31.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
5 - 324
Electrical Specifications
TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2]
Parameter
Vdd = +3V
Min. Typ. Max.
Vdd = +5V
Min. Typ. Max.
Frequency Range
4.8 - 6.0
4.8 - 6.0
Gain
12 14.3
13.5
16.5
Gain Variation Over Temperature
0.01
0.01
Noise Figure
1.25
1.5
1.1 1.4
Input Return Loss
13 13
Output Return Loss
13 18
Output Power for 1 dB Compression (P1dB)
12 14
15 18.5
Saturated Output Power (Psat)
15 19.5
Output Third Order Intercept (IP3)
25.5
31.5
Total Supply Current (Idd)
31 40
73 100
[1] Rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
Units
MHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v01.1008
5
www.datashOeeut4tup.cuomt IP3 vs. Rbias @ 4800 MHz
32
30
Vdd=3V
Vdd=5V
28
26
24
22
20
100
1000
10000
Rbias (Ohms)
100000
Output IP3 vs. Rbias @ 5900 MHz
35
Vdd=3V
32 Vdd=5V
29
26
23
20
100
1000
10000
Rbias (Ohms)
100000
HMC717LP3 / 717LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Gain, Noise Figure & Rbias @ 4800 MHz
20 2.2
17
Vdd=3V
Vdd=5V
2
14 1.8
11 1.6
8 1.4
5 1.2
21
100
1000
10000
100000
Rbias (Ohms)
Gain, Noise Figure & Rbias @ 5900 MHz
18 1.7
16
Vdd=3V
Vdd=5V
1.6
14 1.5
12 1.4
10 1.3
8 1.2
6 1.1
100
1000
10000
100000
Rbias (Ohms)
5 - 328
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC717LP3.PDF ] | |
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