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PDF FDMA6023PZT Data sheet ( Hoja de datos )
| Número de pieza | FDMA6023PZT | |
| Descripción | Dual P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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1. FDMA6023PZT datasheet mosfet  Hay una vista previa y un enlace de descarga de FDMA6023PZT (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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February 2009
FDMA6023PZT
Dual P-Channel PowerTrench® MOSFET
www.datash-e2et04uV.co,m-3.6 A, 60 mΩ
Features
Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A
Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A
Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A
Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A
Low Profile-0.55 mm maximum - in the new package
MicroFET 2x2 mm Thin
HBM ESD protection level > 2.4 kV typical (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony oxides
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultraportable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
Applications
Battery protection
Battery management
Load switch
Pin 1 S1 G1 D2
D1 D2
Q1
S1 1
G1 2
6 D1
5 G2
D1 G2 S2
MicroFET 2x2
D2 3
4 S2
Q2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-3.6
-15
1.4
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
623
Device
FDMA6023PZT
Package
MicroFET 2X2 Thin
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B
1
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
69
151
°C/W
Reel Size
7 ’’
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
1 page  
Dimensional Outline and Pad Layout
www.datasheet4u.com
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDMA6023PZT.PDF ] | |
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