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PDF FDMA510PZ Data sheet ( Hoja de datos )
| Número de pieza | FDMA510PZ | |
| Descripción | Single P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 2008
FDMA510PZ
Single P-Channel PowerTrench® MOSFET
www.datash–ee2t40uV.co,m–7.8A, 30mΩ
tm
Features
General Description
Max rDS(on) = 30mΩ at VGS = –4.5V, ID = –7.8A
Max rDS(on) = 37mΩ at VGS = –2.5V, ID = –6.6A
Max rDS(on) = 50mΩ at VGS = –1.8V, ID = –5.5A
Max rDS(on) = 90mΩ at VGS = –1.5V, ID = –2.0A
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
HBM ESD protection level > 3KV typical (Note 3)
RoHS Compliant
Pin 1
Drain
DD G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D1
6D
D2
5D
G3
4S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–7.8
–24
2.4
0.9
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
510
Device
FDMA510PZ
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000units
©2008 Fairchild Semiconductor Corporation
FDMA510PZ Rev.B1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
www.datasheet4u.com
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
1E-3
10-4
SINGLE PULSE
RθJA = 145oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
102
103
©2008 Fairchild Semiconductor Corporation
FDMA510PZ Rev.B1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMA510PZ.PDF ] | |
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