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IRLBL1304 fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRLBL1304
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRLBL1304 fiche technique
www.datasheet4u.com
l >1mm lower profile than D2Pak
l Same footprint as D2pak
l Logic Level Gate
l Surface mount
l Ultra Low On-Resistance
l Fully Avalanche Rated
l 50% greater current in typ. application
condition vs. D2Pak
G
PD- 91843A
IRLBL1304
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.0045
ID = 185A…
S
Description
The HEXFET® MOSFET is the most popular power MOSFET in the world.
This particular HEXFET® MOSFET is in the SuperD2PakTM and has the same
outline and pinout as the standard D2Pak but has increased current handling
capability and >1mm lower profile. This makes it ideal to reduce component
count in multiparallel D2Pak operation, reduce system power dissipation or
upgrade existing design.
This package has also been designed to meet automotive qualification
standard Q101 and can be used with normal surface mouting equipment
and has the same temperature profile and recommendations as the
commonly used D2Pak.
Super-D2PakTM
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V†
Continuous Drain Current, VGS @ 10V†
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
* Current capability in normal application, see Fig.9.
www.irf.com
Max.
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
260 (1.6mm from case )
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
W
1
2/16/00

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