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PDF NX3V1T66 Data sheet ( Hoja de datos )
| Número de pieza | NX3V1T66 | |
| Descripción | Low-voltage analog switch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX3V1T66
Low-voltage analog switch
Rev. 02 — 24 July 2008
Product data sheet
www.datasheet4u.com
1. General description
The NX3V1T66 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is
LOW, the analog switch is turned off.
A low input voltage threshold allows pin E to be driven by lower level logic signals without
a significant increase in supply current ICC. This makes it possible for the NX3V1T66 to
switch 3.6 V signals with a 1.8 V digital controller, eliminating the need for logic level
translation.
The NX3V1T66 allows signals with amplitude up to VCC to be transmitted from Y to Z or
from Z to Y. Its ultra-low ON resistance (0.3 Ω) and flatness (0.1 Ω) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
I Wide supply voltage range from 1.4 V to 3.6 V
I Very low ON resistance (peak):
N 0.8 Ω (typical) at VCC = 1.4 V
N 0.5 Ω (typical) at VCC = 1.65 V
N 0.3 Ω (typical) at VCC = 2.3 V
N 0.25 Ω (typical) at VCC = 2.7 V
I High noise immunity
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 7500 V
N MM JESD22-A115-A exceeds 200 V
N CDM AEC-Q100-011 revision B exceeds 1000 V
I CMOS low-power consumption
I Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
I Enable input accepts voltages above supply voltage
I 1.8 V control logic at VCC = 3.6 V
I High current handling capability (500 mA continuous current under 3.3 V supply)
I Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Applications
I Cell phone
I PDA
I Portable media player
1 page  
NXP Semiconductors
NX3V1T66
Low-voltage analog switch
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
www.dSatyamshbeoetl4uP.caormameter
Conditions
Tamb = 25 °C
Min Typ Max
CI
CS(OFF)
CS(ON)
input
capacitance
OFF-state
capacitance
ON-state
capacitance
- 1.0 -
- 70 -
- 205 -
Tamb = −40 °C to +125 °C Unit
Min Max Max
(85 °C) (125 °C)
- - - pF
- - - pF
- - - pF
11.1 Test circuits
VIL E
IS Z
VI
VCC
Y IS
GND
VO
VIH E
IS Z
VI
VCC
Y
GND
VO
001aag488
Fig 5.
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Test circuit for measuring OFF-state leakage
current
001aag489
Fig 6.
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8. Resistance RON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13.
Symbol Parameter
Conditions
Tamb = −40 °C to +85 Tamb = −40 °C to +125 °C Unit
°C
Min Typ[1] Max
Min
Max
RON(peak) ON resistance
(peak)
VI = GND to VCC;
ISW = 100 mA; see Figure 7
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 2.7 V
- 0.8 1.9
- 0.5 0.8
- 0.3 0.5
- 0.25 0.45
-
-
-
-
2.1 Ω
0.9 Ω
0.6 Ω
0.5 Ω
NX3V1T66_2
Product data sheet
Rev. 02 — 24 July 2008
© NXP B.V. 2008. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
NX3V1T66
Low-voltage analog switch
www.datasheet4u.com
VCC
0.5VCC
VIH E
Y/Z
RL
Z/Y
fi dB
001aah379
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB.
Fig 17. Test circuit for measuring the frequency response when channel is in ON-state
0.5VCC
RL VIL E
Y/Z
VCC
0.5VCC
RL
Z/Y
fi dB
Adjust fi voltage to obtain 0 dBm level at input.
Fig 18. Test circuit for measuring isolation (OFF-state)
001aah380
NX3V1T66_2
Product data sheet
Rev. 02 — 24 July 2008
© NXP B.V. 2008. All rights reserved.
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