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PDF NX3V1G384 Data sheet ( Hoja de datos )
| Número de pieza | NX3V1G384 | |
| Descripción | Low-ohmic single-pole single-throw analog switch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX3V1G384
Low-ohmic single-pole single-throw analog switch
Rev. 01 — 18 September 2008
Product data sheet
www.datasheet4u.com
1. General description
The NX3V1G384 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active LOW enable input pin (E). When pin E is
HIGH, the analog switch is turned off.
Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times across the entire VCC range from 1.4 V to 3.6 V.
The NX3V1G384 allows signals with amplitude up to VCC to be transmitted from Y to Z or
from Z to Y. Its ultra-low ON resistance (0.3 Ω) and flatness (0.1 Ω) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
I Wide supply voltage range from 1.4 V to 3.6 V
I Very low ON resistance (peak):
N 0.8 Ω (typical) at VCC = 1.4 V
N 0.5 Ω (typical) at VCC = 1.65 V
N 0.3 Ω (typical) at VCC = 2.3 V
N 0.25 Ω (typical) at VCC = 2.7 V
I High noise immunity
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 7500 V
N MM JESD22-A115-A exceeds 200 V
N CDM AEC-Q100-011 revision B exceeds 1000 V
I CMOS low-power consumption
I Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
I Direct interface with TTL levels at 3.0 V
I Control input accepts voltages above supply voltage
I High current handling capability (500 mA continuous current under 3.3 V supply)
I Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Applications
I Cell phone
I PDA
I Portable media player
1 page  
NXP Semiconductors
NX3V1G384
Low-ohmic single-pole single-throw analog switch
11.1 Test circuits
www.datasheet4u.com
VCC
VIH E
IS Z
VI
Y IS
GND
VO
VIL E
IS Z
VI
VCC
Y
GND
VO
001aag479
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Fig 5. Test circuit for measuring OFF-state leakage
current
001aag480
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Fig 6. Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8. Resistance RON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13.
Symbol Parameter Conditions
Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit
Min Typ[1] Max
Min
Max
RON(peak) ON resistance VI = GND to VCC;
(peak)
ISW = 100 mA; see Figure 7
VCC = 1.4 V
-
VCC = 1.65 V
-
VCC = 2.3 V
-
VCC = 2.7 V
-
RON(flat) ON resistance VI = GND to VCC;
(flatness)
ISW = 100 mA
[2]
VCC = 1.4 V
-
VCC = 1.65 V
-
VCC = 2.3 V
-
VCC = 2.7 V
-
0.8 1.9
0.5 0.8
0.3 0.5
0.25 0.45
0.5 1.7
0.25 0.6
0.1 0.2
0.1 0.2
-
-
-
-
-
-
-
-
2.1 Ω
0.9 Ω
0.6 Ω
0.5 Ω
1.8 Ω
0.7 Ω
0.2 Ω
0.2 Ω
[1] Typical values are measured at Tamb = 25 °C.
[2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and
temperature.
NX3V1G384_1
Product data sheet
Rev. 01 — 18 September 2008
© NXP B.V. 2008. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
NX3V1G384
Low-ohmic single-pole single-throw analog switch
www.datasheet4u.com
a. Test circuit
VCC
E
G VI
Y/Z
RL
Z/Y
RL
0.5VCC
0.5VCC
CL V VO
001aai605
logic
input (E)
off
on
off
VO Vct
001aai606
b. input and output pulse definitions
Fig 19. Test circuit for measuring crosstalk voltage between digital inputs and switch
a. Test circuit.
G VI V VO
RL
VCC
E
Y/Z Z/Y Rgen
CL
GND
Vgen
001aai607
logic
input (E)
off
on
off
VO
b. Input and output pulse definitions.
Definition: Qinj = ∆VO × CL.
∆VO = output voltage variation.
Rgen = generator resistance.
Vgen = generator voltage.
Fig 20. Test circuit for measuring charge injection
VO
001aai608
NX3V1G384_1
Product data sheet
Rev. 01 — 18 September 2008
© NXP B.V. 2008. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet NX3V1G384.PDF ] | |
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