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PDF NX3L2G384 Data sheet ( Hoja de datos )
| Número de pieza | NX3L2G384 | |
| Descripción | Dual low-ohmic single-pole single-throw analog switch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX3L2G384
Dual low-ohmic single-pole single-throw analog switch
Rev. 01 — 18 September 2008
Product data sheet
www.datasheet4u.com
1. General description
The NX3L2G384 provides two low-ohmic single pole single throw analog switch functions.
Each switch has two input/output terminals (nY and nZ) and an active LOW enable input
(nE). When pin nE is HIGH, the analog switch is turned off.
Schmitt-trigger action at the enable input (nE) makes the circuit tolerant to slower input
rise and fall times across the entire VCC range from 1.4 V to 3.6 V.
The NX3L2G384 allows signals with amplitude up to VCC to be transmitted from nY to nZ;
or from nZ to nY. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
I Wide supply voltage range from 1.4 V to 3.6 V
I Very low ON resistance (peak):
N 1.6 Ω (typical) at VCC = 1.4 V
N 1.0 Ω (typical) at VCC = 1.65 V
N 0.55 Ω (typical) at VCC = 2.3 V
N 0.50 Ω (typical) at VCC = 2.7 V
I High noise immunity
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 7500 V
N MM JESD22-A115-A exceeds 200 V
N CDM AEC-Q100-011 revision B exceeds 1000 V
I CMOS low-power consumption
I Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
I Direct interface with TTL levels at 3.0 V
I Control input accepts voltages above supply voltage
I High current handling capability (350 mA continuous current under 3.3 V supply)
I Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Applications
I Cell phone
I PDA
I Portable media player
1 page  
NXP Semiconductors
NX3L2G384
Dual low-ohmic single-pole single-throw analog switch
11. Static characteristics
www.datasheet4u.com
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions
25 °C
−40 °C to +125 °C
Unit
Min Typ Max
Min Max Max
(85 °C) (125 °C)
VIH HIGH-level VCC = 1.4 V to 1.95 V
input voltage VCC = 2.3 V to 2.7 V
0.65VCC
1.7
-
-
- 0.65VCC -
- 1.7 -
-V
-V
VCC = 2.7 V to 3.6 V
2.0 - - 2.0 -
-V
VIL
LOW-level
VCC = 1.4 V to 1.95 V
input voltage VCC = 2.3 V to 2.7 V
- - 0.35VCC - 0.35VCC 0.35VCC V
- - 0.7 - 0.7 0.7 V
II
IS(OFF)
input leakage
current
OFF-state
leakage
current
VCC = 2.7 V to 3.6 V
enable input nE;
VI = GND to 3.6 V;
VCC = 1.4 V to 3.6 V
nY port;
VCC = 1.4 V to 3.6 V;
see Figure 5
- - 0.8 - 0.8 0.8 V
---
- ±0.5 ±1 µA
- - ±5 - ±50 ±500 nA
IS(ON)
ON-state
leakage
current
nZ port;
VCC = 1.4 V to 3.6 V;
see Figure 6
- - ±5 - ±50 ±500 nA
ICC supply current VI = VCC or GND;
VCC = 3.6 V;
VSW = GND or VCC
- - 100
690 6000 nA
CI input
capacitance
- 1.0 - - - - pF
CS(OFF) OFF-state
capacitance
- 35 - - - - pF
CS(ON) ON-state
capacitance
- 110 - - - - pF
11.1 Test circuits
VIH E
IS Z
VI
VCC
Y IS
GND
VO
001aag479
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Fig 5. Test circuit for measuring OFF-state leakage
current
VIL E
IS Z
VI
VCC
Y
GND
VO
001aag480
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Fig 6. Test circuit for measuring ON-state leakage
current
NX3L2G384_1
Product data sheet
Rev. 01 — 18 September 2008
© NXP B.V. 2008. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
NX3L2G384
Dual low-ohmic single-pole single-throw analog switch
Table 12. Additional dynamic characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
www.dsaptaeschifieeedt4)u; .tcro=mtf ≤ 2.5 ns.
Symbol Parameter
Conditions
25 °C
Unit
Min Typ Max
Qinj charge injection
fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V;
Rgen = 0 Ω; see Figure 21
VCC = 1.5 V
VCC = 1.8 V
- 3 - pC
- 3 - pC
VCC = 2.5 V
- 3 - pC
VCC = 3.3 V
- 3 - pC
[1] fi is biased at 0.5VCC.
13. Test circuits
VCC
0.5VCC
VIL E
RL
Y/Z Z/Y
fi D
Fig 16. Test circuit for measuring total harmonic distortion
001aai602
VCC
0.5VCC
VIL E
RL
Y/Z Z/Y
fi dB
001aai603
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB.
Fig 17. Test circuit for measuring the frequency response when channel is in ON-state
NX3L2G384_1
Product data sheet
Rev. 01 — 18 September 2008
© NXP B.V. 2008. All rights reserved.
11 of 18
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet NX3L2G384.PDF ] | |
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