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Numéro de référence | IRFB17N60K | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | Vishay Siliconix | ||
Logo | |||
1 Page
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Power MOSFET
www.datasPheReOt4uD.cUomCT SUMMARY
VDS (V)
600
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
99
Qgs (nC)
32
Qgd (nC)
47
Configuration
Single
0.35
TO-220
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Smaller TO-220 Package
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
TO-220
IRFB17N60KPbF
SiHFB17N60K-E3
IRFB17N60K
SiHFB17N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = 17 A (see fig. 12).
c. ISD ≤ 17 A, dI/dt ≤ 380 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
LIMIT
600
± 30
17
11
68
2.7
330
17
34
340
11
- 55 to + 150
300d
10
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
N
www.vishay.com
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Pages | Pages 8 | ||
Télécharger | [ IRFB17N60K ] |
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