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Numéro de référence | IRFB17N60K | ||
Description | SMPS MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 94578
www.datasheet4u.com
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
600V
IRFB17N60K
HEXFET® Power MOSFET
RDS(on) typ.
0.35Ω
ID
17A
Benefits
l Smaller TO-220 Package
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Max.
17
11
68
340
2.7
± 30
11
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
–––
–––
Max.
330
17
34
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.37
–––
58
Units
°C/W
www.irf.com
1
11/19/02
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Pages | Pages 8 | ||
Télécharger | [ IRFB17N60K ] |
No | Description détaillée | Fabricant |
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