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PDF B17N60K Data sheet ( Hoja de datos )

Número de pieza B17N60K
Descripción IRFB17N60K
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! B17N60K Hoja de datos, Descripción, Manual

PD - 94578
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SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
600V
IRFB17N60K
HEXFET® Power MOSFET
RDS(on) typ.
0.35
ID
17A
Benefits
l Smaller TO-220 Package
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Max.
17
11
68
340
2.7
± 30
11
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
–––
–––
Max.
330
17
34
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.37
–––
58
Units
°C/W
www.irf.com
1
11/19/02

1 page




B17N60K pdf
www.datasheet4u.com
18
16
14
12
10
8
6
4
2
0
25
50 75 100 125
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
150
IRFB17N60K
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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0.1
5

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