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Número de pieza | HMC552LP4 | |
Descripción | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER | |
Fabricantes | Hittite Microwave Corporation | |
Logotipo | ||
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www.datashTeeyt4pui.ccoaml Applications
The HMC552LP4 / HMC552LP4E is ideal for
Wireless Infrastructure Applications:
7 • PCS / 3G Infrastructure
• Base Stations & Repeaters
• WiMAX & WiBro
• ISM & Fixed Wireless
Functional Diagram
HMC552LP4 / 552LP4E
GaAs MMIC MIXER w/ INTEGRATED
LO AMPLIFIER, 1.6 - 3.0 GHz
Features
Input IP3: +25 dBm
Low Input LO Drive: -4 to +4 dBm
LO to RF Isolation: 30 dB
Low Conversion Loss: 8 dB
Single Positive Supply: +5V @ 62 mA
RoHS Compliant 4x4 mm QFN Package
General Description
The HMC552LP4 & HMC552LP4E are high linearity,
double-balanced converter ICs that operate from
1.6 to 3.0 GHz and deliver a +25 dBm input third
order intercept point. The LO amplifier output and
high dynamic range mixer input are positioned so
that an external LO filter can be placed in series be-
tween them. The converter provides 30 dB of LO to
RF isolation and is ideal for upconverter and down-
converter applications. The IC operates from a single
+5V supply consuming 62 mA of current and accepts a
LO drive level of -4 to +4 dBm. The design requires no
external baluns and supports IF frequencies between
DC and 1 GHz. The HMC552LP4 & HMC552LP4E
are pin for pin compatible with the HMC551LP4 &
HMC551LP4E, which operate from 0.8 to 1.2 GHz.
Electrical Specifications, TA = +25° C, LO = 0 dBm, Vcc = +5V, IF = 100 MHz*
Parameter
Min.
Typ. Max.
Frequency Range, RF, LO
1.6 - 3.0
Frequency Range, IF
DC - 1.0
Conversion Loss
8 10
Noise Figure (SSB)
8
LO to RF Isolation
25 30
LO to IF Isolation
10 20
IP3 (Input)
25
1 dB Compression (Input)
16
LO Drive Input Level (Typical)
-4 to +4
Supply Current (Icc)
62
*Unless otherwise noted, all measurements performed as a downconverter configured as shown in application circuit.
Units
GHz
GHz
dB
dB
dB
dB
dBm
dBm
dBm
mA
7 - 414
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page v00.0306
www.datashAeebt4su.ocolmute Maximum Ratings
RF / IF Input (Vcc= +5V)
+31 dBm
LO Drive (Vcc= +5V)
+10 dBm
7
BIAS
Junction Temperature
Continuous Pdiss (T = 85°C)
(derate 9.5 mW/°C above 85°C)
+7 Vdc
150°C
0.6 W
Thermal Resistance
(junction to ground paddle)
105.6 °C/W
Storage Temperature
-65 to +150°C
Operating Temperature
-40 to +85°C
Outline Drawing
HMC552LP4 / 552LP4E
GaAs MMIC MIXER w/ INTEGRATED
LO AMPLIFIER, 1.6 - 3.0 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
7 - 418
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC552LP4
Package Body Material
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC552LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H552
XXXX
H552
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HMC552LP4.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMC552LP4 | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER | Hittite Microwave Corporation |
HMC552LP4E | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER | Hittite Microwave Corporation |
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