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Hittite Microwave Corporation - Wideband Power Amp

Numéro de référence HMC619LP5E
Description Wideband Power Amp
Fabricant Hittite Microwave Corporation 
Logo Hittite Microwave Corporation 





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HMC619LP5E fiche technique
v01.1007
9
www.datashTeeytp4ui.ccoaml Applications
The HMC619LP5(E) wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC619LP5 / 619LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Features
P1dB Output Power: +27 dBm
Gain: 11 dB
Output IP3: +37 dBm
Supply Voltage: +12V @ 300 mA
50 Ohm Matched Input/Output
32 Lead 5x5mm Lead SMT Package: 25mm2
General Description
The HMC619LP5(E) is a GaAs MMIC PHEMT
Distributed Power Amplifier die which operates
between DC and 10 GHz. The amplifier provides
11 dB of gain, +37 dBm output IP3 and +27 dBm
of output power at 1 dB gain compression while
requiring 300mA from a +12V supply. Gain flatness
is excellent at ±0.5 dB from DC - 10 GHz making the
HMC619LP5(E) ideal for EW, ECM, Radar and test
equipment applications. The HMC615LP5(E) amplifier
I/Os are internally matched to 50 ohms.
9 - 318
Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA*
Parameter
Min. Typ. Max.
Frequency Range
DC - 2.0
Gain
11 12
Gain Flatness
±0.5
Gain Variation Over Temperature
0.016
Input Return Loss
11
Output Return Loss
12 16
Output Power for 1 dB Compression (P1dB)
28
Saturated Output Power (Psat)
29
Output Third Order Intercept (IP3)
41
Noise Figure
5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
300
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
Min.
10.5
11
26
Typ.
2.0 - 8.0
11
±0.25
0.02
12.5
16
27
28
37
5
Max.
300
Min.
9.5
7
24
Typ.
8.0 - 10.0
10.5
±0.5
0.03
17
12
25
25.5
32
7
Max.
300
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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