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PDF H6NA80FI Data sheet ( Hoja de datos )
| Número de pieza | H6NA80FI | |
| Descripción | STH6NA80FI | |
| Fabricantes | ST Microelectronics | |
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STW6NA80
® STH6NA80FI
N - CHANNELwww.datasheet4u.com 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
S TW 6NA8 0
STH6NA80FI
V DSS
800 V
800 V
RDS(on)
< 2.2 Ω
< 2.2 Ω
ID
5.4 A
3.4 A
s TYPICAL RDS(on) = 1.8 Ω
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s VERY HIGH CURRENT CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Value
STW6NA80 STH6NA80FI
800
800
± 30
5.4 3.4
3.4 2.1
22 22
150 60
1.2 0.48
4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10
1 page  
Transconductance
www.datasheet4u.com
STW6NA80-STH6NA80FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
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| PDF Descargar | [ Datasheet H6NA80FI.PDF ] | |
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