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PDF FR120N Data sheet ( Hoja de datos )
| Número de pieza | FR120N | |
| Descripción | IRFR120N | |
| Fabricantes | Fairchild Semiconductor | |
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Hay una vista previa y un enlace de descarga de FR120N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
IRFR120, IRFU120
January 2002
8.4A, 100V, 0.270 Ohm, N-Channel
Power MOSFETs
www.Tdahteasseheaerte4uN.c-oCmhannel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09594.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR120
TO-252AA
IFR120
IRFU120
TO-251AA
IFU120
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in the tape and reel, i.e., IRFR120T.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 8.4A, 100V
• rDS(ON) = 0.270Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
DRAIN
(FLANGE)
DRAIN
SOURCE
©2002 Fairchild Semiconductor Corporation
IRFR120, IRFU120 Rev. B
1 page  
IRFR120, IRFU120
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
www.datas1h.e0e5t4u.com
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
600
400 CISS
200
0
1
COSS
CRSS
2
5 10
2
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
4
TJ = 25oC
3
TJ = 175oC
2
1
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 175oC
1
TJ = 25oC
0
0 3 6 9 12 15
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 8.4A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
0 0 3 6 9 12 15
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFR120, IRFU120 Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FR120N.PDF ] | |
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