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Numéro de référence | LX5506M | ||
Description | InGaP HBT 4.5 - 6GHz Power Amplifier | ||
Fabricant | Microsemi Corporation | ||
Logo | |||
LX5506M
TM ® InGaP HBT 4.5 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
www.datTahsheeLetX4u5.5co0m6M is a power amplifier of up to 20% at maximum linear output
optimized for the FCC Unlicensed power for OFDM mask compliance. It
National Information Infrastructure also features an on-chip output power
(U-NII) band, HyperLAN2, and detector to help reduce BOM cost and
Japan’s WLAN applications in the board space in system implementation.
4.9-5.9 GHz frequency range. The PA The on-chip detector allows simple
is implemented as a three-stage interface with an external directional
monolithic microwave integrated coupler, providing accurate output
circuit (MMIC) with active bias, on- power level readings insensitive to
chip input matching and output pre- frequency, temperature, and load
matching. The device is manufactured VSWR.
with an InGaP/GaAs Heterojunction LX5506M is available in a 16-pin
Bipolar Transistor (HBT) IC process 3mmx3mm micro-lead package (MLP).
(MOCVD). It operates with a single The compact footprint, low profile, and
positive voltage supply of 3.3V excellent thermal capability of the MLP
(nominal), with up to +22dBm linear package makes the LX5506M an ideal
output power for 802.11a OFDM solution for broadband, high-gain
spectrum mask compliance, and low power amplifier requirements for IEEE
EVM of -30dB for up to +18dBm 802.11a, and HyperLAN2 portable
output power in the 4.9-5.9GHz band. WLAN applications.
LX5506M features high gain of up
to 30dB with low quiescent current of
90mA, and high power added efficiency
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Broadband 4.9-5.9GHz Operation
Advanced InGaP HBT
Single-Polarity 3.3V Supply
Power Gain ~ 30dB at 5.25GHz
Power Gain > ~28dB Across 4.9-
5.9GHz
EVM ~ -30dB at Pout=+17dBm at
5.25GHz
EVM ~ -30dB at Pout=+18dBm at
5.85GHz
Total Current ~140mA for Pout =
+17dBm at 5.25GHz (For High Duty
Cycle of 90%)
Maximum Linear Power ~ +22dBm
for OFDM Mask Compliance
Maximum Linear Efficiency ~ 20%
On-chip Output Power Detector with
Improved Frequency and Load-
VSWR Insensitivity
On-Chip Input Match
On-Chip RF Decoupling
Simple Output Match for Optimal
Broadband EVM
Small Footprint: 3x3mm2
Low Profile: 0.9mm
APPLICATIONS
FCC U-NII Wireless
IEEE 802.11a
HyperLAN2
5GHz Cordless Phone
PRODUCT HIGHLIGHT
Copyright © 2005
Rev. 1.0a, 2005-11-02
PACKAGE ORDER INFO
TJ (°C)
Plastic MLPQ
LQ 16 pin
RoHS Compliant / Pb-free
0 to 70
LX5506MLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part
number. (i.e. LX5506MLQ-TR)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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Pages | Pages 2 | ||
Télécharger | [ LX5506M ] |
No | Description détaillée | Fabricant |
LX5506 | InGaP HBT 4.5 - 6GHz Power Amplifier | Microsemi Corporation |
LX5506B | InGaP HBT 4 6GHz Power Amplifier | Microsemi Corporation |
LX5506E | InGaP HBT 4 - 6GHz Power Amplifier | Microsemi Corporation |
LX5506M | InGaP HBT 4.5 - 6GHz Power Amplifier | Microsemi Corporation |
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