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PDF LX5506B Data sheet ( Hoja de datos )

Número de pieza LX5506B
Descripción InGaP HBT 4 6GHz Power Amplifier
Fabricantes Microsemi Corporation　
Logotipo Microsemi Corporation Logotipo



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LX5506B
TM ® InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
www.datTahsheeLetX4u5.5co0m6B is a power amplifier supply of 3.3V (nominal), with
optimized for the FCC Unlicensed +26dBm of P1dB and up to 25dB
National Information Infrastructure power gain in the 5.15 - 5.85GHz
(U-NII) band, HyperLAN2 and Japan frequency range with a simple output
WLAN applications in the 4.9-5.85 matching capacitor pair.
GHz frequency range. The PA is LX5506B is available in a 16-pin
implemented as a three-stage 3mmx3mm micro-lead package (MLP).
monolithic microwave integrated The compact footprint, low profile, and
circuit (MMIC) with active bias, on- excellent thermal capability of the MLP
chip input matching and output pre- package makes the LX5506B an ideal
matching. It also features an on-chip solution for broadband, high-gain
output power detector to help reduce power amplifier requirements for IEEE
BOM cost and PCB board space for 802.11a, and HiperLAN2 portable
system implementations. The device is WLAN applications.
manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD). It
operates with a single positive voltage
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ Single-Polarity Voltage Supply
ƒ EVM ~ 2.5% at Pout=+18dBm,
64QAM/ 54Mbps OFDM (3.3V)
ƒ Power Gain ~ 25dB at 5.25GHz
& Pout=+18dBm
ƒ Power Gain ~ 21dB at 5.85GHz
& Pout=+18dBm
ƒ P1dB ~ +26dBm across 5.15 –
5.85 GHz
ƒ Total Current ~ 170mA for
Pout=+18dBm at 5.25GHz
ƒ Total Current ~ 200mA for
Pout=+20dBm at 5.25GHz
ƒ ACPR ~ -48dBc at 30MHz
Offset at Pout=+18dBm
ƒ Integrated Power Detector
ƒ Complete On-Chip Input Match
ƒ Simple Output Capacitor Match
ƒ Small Footprint: 3x3mm2
ƒ Low Profile: 0.9mm
APPLICATIONS/BENEFITS
ƒ FCC U-N11 Wireless
ƒ IEEE 802.11a
ƒ HiperLAN2
LQ
PACKAGE ORDER INFO
Plastic MLPQ
16-Pin
RoHS Compliant / Pb-free
LX5506BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5506BLQ-TR)
This device is classified as ESD Level 0 in accordance with MIL-STD-883,
Method 3015 (HBM) testing. Appropriate ESD procedures should be
observed when handling this device.
Copyright © 2003
Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1

1 page




LX5506B pdf
LX5506B
TM ® InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
SMALL SIGNAL GAIN OVER TEMP
www.datasheet4u.com
25
24
23
22
21
20
19
18
17
+85°C
+25°C
16 -40°C
15
5.15 5.25 5.35 5.45 5.55 5.65 5.75
Frequency (GHz)
VC = 3.3V, VREF = 2.9V, ICQ = 90mA @ Room Temperature
5.85
SMALL SIGNAL VS SUPPLY VOLTAGE
25.5
25.4 S21 @ 5.25GHZ
25.3
25.2
25.1
25.0
24.9
24.8
24.7
24.6
24.5
24.4
24.3
24.2
24.1
24.0
3
3.1 3.2 3.3 3.4 3.5 3.6
Supply Voltage Vc(V)
VREF = 2.9V, ICQ = 90mA for Nominal VC =-3.3V
SMALL SIGNAL VS. REF VOLTAGE
30
25 S21 @ 5.25GHz
20
15
10
05
00
-05 PA “OFF”
-10
PA “ON”
-15
-20
-25
-30
1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3
Vref (V)
VC = 3.3V, ICQ = 90mA for Nominal VREF = 2.9V
QUESCENT CURRENT VS. REF VOLTAGE
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
2.5
Icq
∆Icq ∆vref ~
0.2mA mV
2.6 2.7 2.8 2.9 3.0 3.1
Vref (V)
VC = 3.3V, ICQ = 90mA for Nominal VREF = 2.9V
3.2
3.3
Copyright © 2003
Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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