PDF IRFP460LC Data sheet ( Hoja de datos )

Número de pieza	IRFP460LC
Descripción	Power MOSFET ( Transistor )
Fabricantes	Vishay Siliconix
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No Preview Available ! IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET www.datasPheReOt4uD.cUomCT SUMMARY VDS (V) 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single 0.27 D TO-247 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Isolated Central Mounting Hole • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliabiltity of Power MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. TO-247 IRFP460LCPbF SiHFP460LC-E3 IRFP460LC SiHFP460LC ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12). c. ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91235 S-81360-Rev. A, 28-Jul-08 LIMIT 500 ± 30 20 12 80 2.2 960 20 28 280 3.5 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m www.vishay.com 1 1 page www.datasheet4u.com Fig. 9 - Maximum Drain Current vs. Case Temperature IRFP460LC, SiHFP460LC Vishay Siliconix VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS Vary tp to obtain required IAS RG 10 V tp L D.U.T. IAS 0.01 Ω + - V DD Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91235 S-81360-Rev. A, 28-Jul-08 VDS VDS tp VDD IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 5 Page

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