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Numéro de référence | BDX66B | ||
Description | SILICON POWER TRANSISTOR | ||
Fabricant | SavantIC | ||
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1 Page
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX66B
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High current
·DARLINGTON
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current(peak)
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-100
-5
-16
-20
-0.25
150
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.17
UNIT
/W
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Pages | Pages 3 | ||
Télécharger | [ BDX66B ] |
No | Description détaillée | Fabricant |
BDX66 | PNP SILICON DARLINGTONS | ETC |
BDX66 | Bipolar PNP Device | Seme LAB |
BDX66 | SILICON POWER TRANSISTOR | SavantIC |
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