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Numéro de référence | BDT86F | ||
Description | (BDT82F - BDT88F) Silicon PNP Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BDT82F/84F/86F/88F
DESCRIPTION
·DC Current
www.datasheet4u.com
Gain
-hFE
=
40(Min)@
IC=
-5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F;
-100V(Min)- BDT86F; -120V(Min)- BDT88F
·Complement to Type BDT81F/83F/85F/87F
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT82F
-60
VCBO
Collector-Base Voltage
BDT84F
BDT86F
-80
-100
V
BDT88F -120
BDT82F
-60
VCEO
BDT84F
Collector-Emitter Voltage
BDT86F
-80
-100
V
BDT88F -120
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-15 A
ICM Collector Current-Peak
-20 A
IBB Base Current
PC
Collector Power Dissipation
TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-4
36
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6 ℃/W
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ BDT86F ] |
No | Description détaillée | Fabricant |
BDT86 | (BDT82 - BDT88) Silicon PNP Power Transistors | Inchange Semiconductor |
BDT86 | (BDT82 - BDT88) SILICON POWER TRANSISTOR | Comset Semiconductors |
BDT86F | (BDT82F - BDT88F) Silicon PNP Power Transistors | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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