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Numéro de référence | BDT85 | ||
Description | (BDT81 - BDT87) Silicon NPN Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·DC Current
www.datasheet4u.com
Gain
-hFE
=
40(Min)@
IC=
5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83;
100V(Min)- BDT85; 120V(Min)- BDT87
·Complement to Type BDT82/84/86/88
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT81
60
VCBO
Collector-Base Voltage
BDT83
BDT85
80
100
V
BDT87
120
BDT81
60
VCEO
BDT83
Collector-Emitter Voltage
BDT85
80
100
V
BDT87
120
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
15 A
ICM Collector Current-Peak
20 A
IBB Base Current
PC
Collector Power Dissipation
TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
4
125
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1
70
UNIT
℃/W
℃/W
isc Product Specification
BDT81/83/85/87
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ BDT85 ] |
No | Description détaillée | Fabricant |
BDT81 | (BDT81 - BDT87) Silicon NPN Power Transistors | Inchange Semiconductor |
BDT81 | (BDT81 - BDT87) SILICON POWER TRANSISTOR | Comset Semiconductors |
BDT81F | (BDT81F - BDT87F) Silicon NPN Power Transistors | Inchange Semiconductor |
BDT82 | (BDT82 - BDT88) Silicon PNP Power Transistors | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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