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Toshiba Semiconductor - RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE

Numéro de référence S-AV33A
Description RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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S-AV33A fiche technique
TOSHIBA RF POWER AMPLIFIER MODULE
S-AV33A
S-AV33A
FM RF POWER AMPLIFIER MODULE FOR 32W COMMERCIAL VHF RADIO APPLICATIONS
www.dataPshoeewt4eu.rcoGmain: 28 dB (Min.)
Total Efficiency: 45% (Min.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 10 A, ZG = ZL = 50Ω)
CHARACTERISTICS
SYMBOL
TEST CONDITION
RATING
UNIT
Maximum Current
IT
10 A
Power Supply Voltage
VDD VGG = 0 V (GND), RF: none
16.5 V
Control Voltage
VGG 10.5 VDD 16.5 V, Pi = 50 mW
5.5 V
Instantaneous Output Power
Pomax
VGG 5.5 V, Pi = 50 mW, 10.5 VDD
16.5V, within 2 seconds
40
W
Input Power
Pi 10.5 VDD 16.5 V, VGG 5.5 V
100 mW
Operating Case Temperature
Tc (opr)
10.5 VDD 16.5 V, VGG 5.5 V, Pi = 50
mW (Note 2)
-30 to 100
°C
Storage Temperature
Tstg
-40 to 110
°C
Note 1: The maximum ratings are the limits that must not be exceeded even for an instant, under worst possible
conditions. Exceeding the ratings may cause device damage, ignition, or deterioration. Therefore, when
designing the circuitry, derating factors should be applied so that the absolute maximum ratings are not
exceeded.
Note 2: The output power rating satisfies the range shown in Figures 1 and 2 according to the operating case
temperature. Ensure that the device should be operated within the specified operating range. The figures below
indicate the output power obtained 2 seconds after Po is generated.
Pomax-Tc
40
35
30
25
20
15
10
5
0
-30 -20 -10 0 10 20 30 40 50 60 70 80 90 100
Tc (℃)
PDmax-Tc
100
90
80
70
60
50
40
30 Power dissipation (PD)
20 PD = (VDD × IDD) – Po + Pi
10
0
-30 -20 -10 0
10 20 30 40 50 60 70 80 90 100
Tc(℃)
Figure 1 Pomax-Tc
Figure 2 PDmax-Tc
*When the device is used at Tc =100°C, the output power rating is 31 W as shown in Figure 1. When the power
dissipation at Tc = 100°C exceeds the rating shown in Figure 2, the output derating is required to limit the dissipation
within the specified range.
Note 3: The case temperature is monitored using the screw terminal blocks on the input side that are used for the
module implementation.
Note 4: To protect a device from being permanently damaged, the power-on sequence must be as follows (, while the
reversed order should be applied when turning off): 1. VDD, 2. Pi, 3. VGG
1 2007-06-21

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