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KDS8958 fiches techniques PDF

Guangdong Kexin Industrial - Dual N & P-Channel PowerTrench MOSFET

Numéro de référence KDS8958
Description Dual N & P-Channel PowerTrench MOSFET
Fabricant Guangdong Kexin Industrial 
Logo Guangdong Kexin Industrial 





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KDS8958 fiche technique
SMD Type
TransistIoCrs
www.datasheet4u.com
Dual N & P-Channel PowerTrench MOSFET
KDS8958
Features
N-Channel
7.0 A, 30 V RDS(ON) = 0.028 @ VGS = 10 V
RDS(ON) = 0.040 @ VGS =4.5V
P-Channel
-5 A, -30 V RDS(ON) = 0.052 @ VGS =- 10 V
RDS(ON) = 0.080 @ VGS =-4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JA
R JC
N-Channel
P- Channel
30 30
20 20
7 -5
20 -20
2
1.6
1
0.9
-55 to 150
78
40
Unit
V
V
A
A
W
W
/W
/W
www.kexin.com.cn 1

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