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IRF7402PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7402PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7402PBF fiche technique
PD - 95202
www.datasheet4u.com
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
Description
S
S
S
G
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
IRF7402PbF
HEXFET® Power MOSFET
AA
1 8D
2 7D
3 6D
4 5D
Top View
VDSS = 20V
RDS(on) = 0.035
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
6.8
5.4
54
2.5
1.6
0.02
± 12
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
www.irf.com
1
9/30/04

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