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PDF CF5010 Data sheet ( Hoja de datos )
| Número de pieza | CF5010 | |
| Descripción | Crystal Oscillator Module ICs | |
| Fabricantes | Nippon Precision Circuits | |
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SM5010 series
Crystal Oscillator Module ICs
OVERVIEW
The SM5010 series are crystal oscillator module ICs. They incorporate oscillator and output buffer circuits,
employing built-in oscillator capacitors and feedback resistors with excellent frequency response, eliminating the
need for external components to form a stable crystal oscillator. There are 7 oscillator configurations available for
design and application optimization.
FEATURES
I 7 types of oscillation circuit structure
For fundamental oscillator
• 5010A×× :Simple structure with low frequency vari-
ation
• 5010B×× :Low crystal current type with RD built-in
oscillation circuit
• 5010CL× :Oscillation stop function built-in
• 5010DN×:External capacitors, CG and CD required
• 5010EA× :Low current consumption type
For 3rd overtone oscillator
• 5010F×× :Suitable for round blank
• 5010H×× :External resistor, Rf required
I 2.7 to 5.5V operating supply voltage
I Capacitors CG, CD built-in
I Inverter amplifier feedback resistor built-in
I Output duty level
• TTL level: AK×, BK×, HK×
• CMOS level: AN×, AH×, BN×, BH×, CL×, DN×,
EA×, FN×, FH×, HN×
I Oscillator frequency output (fO, fO/2, fO/4, fO/8, fO/16
determined by internal connection)
I Standby function
I Pull-up resistor built-in
I 8-pin SOP (SM5010×××S)
I Chip form (CF5010×××)
SERIES CONFIGURATION
For Fundamental Oscillator
Version1
CF5010AN1
CF5010AN2
CF5010AN3
CF5010AN4
CF5010AK1
CF5010AH1
CF5010AH2
CF5010AH3
CF5010AH4
CF5010BN1
CF5010BN2
CF5010BN3
CF5010BN4
CF5010BN5
CF5010BK1
CF5010BH1
CF5010BH2
CF5010BH3
CF5010BH4
CF5010CL1
CF5010CL2
CF5010CL3
CF5010CL4
CF5010CL5
CF5010DN1
CF5010EA1
CF5010EA2
Operating
supply
voltage range
[V]
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
Built-in
capacitance
CG CD
[pF] [pF]
29 29
29 29
29 29
22 22
22 22
22 22
18 18
––
10 15
RD
[Ω]
–
–
–
820
820
820
–
820
820
1. Package devices have designation SM5010×××S.
Output
current Output duty
(VDD = 5V)
[mA]
level
CMOS
16
CMOS/TTL
16 TTL
4 CMOS
CMOS
16
CMOS/TTL
16 TTL
4 CMOS
16 CMOS
16 CMOS
4 CMOS
Output
frequency
fO
fO/2
fO/4
fO/8
fO
fO
fO/2
fO/4
fO/8
fO
fO/2
fO/4
fO/8
fO/16
fO
fO
fO/2
fO/4
fO/8
fO
fO/2
fO/4
fO/8
fO/16
fO
fO
fO/2
INHN input
Standby mode
level
(VDD = 5V)
Oscillator
stop function
Output state
TTL No High impedance
TTL No High impedance
TTL No High impedance
TTL No High impedance
TTL No High impedance
TTL No High impedance
CMOS
Yes High impedance
TTL No High impedance
TTL Yes
LOW
SEIKO NPC CORPORATION —1
1 page  
SM5010 series
FUNCTIONAL DESCRIPTION
Standby Function
www.datashe5e0t41u0.cAoHm×, AK×, AN×, BH×, BK×, BN×, DN×, FN×, FH×, HN×, HK× series
When INHN goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
5010CL× series
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
5010EA× series
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes LOW.
Version
AH×, AK×, AN×, BH×,
BK×, BN×, DN×, FH×,
FH×, HN×, HK× series
CL× series
EA× series
INHN
HIGH (or open)
LOW
HIGH (or open)
LOW
HIGH (or open)
LOW
Q
Any fO, fO/2, fO/4, fO/8 or fO/16 output frequency
High impedance
Any fO, fO/2, fO/4, fO/8 or fO/16 output frequency
High impedance
Either fO or fO/2 output frequency
LOW
Oscillator
Normal operation
Normal operation
Normal operation
Stopped
Normal operation
Stopped
Power-saving Pull-up Resistor (CL series only)
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
SEIKO NPC CORPORATION —5
5 Page 
SM5010 series
5010EA× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
www.datasheet4u.coPmarameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Current consumption
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA
VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA
VIH INHN
VIL INHN
IDD
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010EA1
5010EA2
RUP2 Measurement cct 4
Rf Measurement cct 5
RD Design value
CG
Design value. A monitor pattern on a wafer is tested.
CD
Rating
min typ
2.1 2.4
– 0.3
2.0 –
––
–4
– 2.5
40 100
80 200
690 820
9 10
13 15
max
–
0.5
–
0.5
8
5
250
500
940
11
17
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Current consumption
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 3.2mA
VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 3.2mA
VIH INHN
VIL INHN
IDD1
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010EA1
5010EA2
IDD2
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 40MHz
5010EA1
5010EA2
RUP2 Measurement cct 4
Rf Measurement cct 5
RD Design value
CG
Design value. A monitor pattern on a wafer is tested.
CD
Rating
min typ
3.9 4.2
– 0.3
2.0 –
––
–6
–5
–9
–6
40 100
80 200
690 820
9 10
13 15
max
–
0.4
–
0.8
12
10
18
12
250
500
940
11
17
Unit
V
V
V
V
mA
kΩ
kΩ
Ω
pF
Unit
V
V
V
V
mA
kΩ
kΩ
Ω
pF
SEIKO NPC CORPORATION —11
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet CF5010.PDF ] | |
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