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PDF 2SA2166 Data sheet ( Hoja de datos )
| Número de pieza | 2SA2166 | |
| Descripción | SILICON PNP EPITAXIAL TYPE | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SA2166 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
www.datIaSsAheHeAt4YuA.co2mSA2166 is a silicon PNP epitaxial type transistor
designed with high collector current, low VCE（sat）.
FEATURE
●High collector current
IC（MAX）=-500mA
●Low collector to emitter saturation voltage
VCE（sat）<-0.4Vmax(IC=-150mA、IB=-15mA）
OUTLINE DRAWING
2.5
0.5 1.5
①
Unit：mm
0.5
③
②
APPLICATION
For switching application, small type motor drive application.
MAXIMUM RATINGS（Ta=25℃）
記号
VCEO
VCBO
VEBO
IC
PC
Tj
Tstg
項目
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
定格値
-60
-60
-5
-500
200
150
-55～150
単位
V
V
V
mA
mW
℃
℃
Notice: The dimension without
tolerance represent central
value.
TERMINAL CONNECTOR
①：BASE
EIAJ：SC-59
②：EMITTER
JEDEC：TO-236
③：COLLECTOR
Resemblance
MARKING
Type Name
A・W
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
Test condition
V（BR）CEO
V（BR）CBO
V（BR）EBO
ICBO
IEBO
hFE
VCE（sat）
VBE（sat）
fT
Cob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
IC=-1mA、IB=0
IC=-10uA、IE=0
IE=-10uA、IC=0
VCB=-50V、IE=0
VEB=-3V、IC=0
IC=-150mA、VCE=-10V
IC=-150mA、IB=-15mA
IC=-150mA、IB=-15mA
IE=50mA、VCE=-20V、f=100MHz
VCB=-10V、f=1MHz
Limits
Min Typ Max
Unit
-60 V
-60 V
-5 V
-100 nA
-100 nA
100 300 ---
-0.4 V
-1.3 V
200 MHz
8 pF
ISAHAYA ELECTRONICS CORPORATION
20050621
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA2166.PDF ] | |
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