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Galaxy Semi-Conductor - SILICON BRIDGE RECTIFIERS

Numéro de référence KBU8M
Description SILICON BRIDGE RECTIFIERS
Fabricant Galaxy Semi-Conductor 
Logo Galaxy Semi-Conductor 





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KBU8M fiche technique
BL GALAXY ELECTRICAL
KBU8A---KBU8M
www.DataSheet4U.com
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 8.0A
FEATURES
Rating to 1000V PRV
Surge overload rating to 250 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
KBU
.933(23.7)
.894(22.7)
.160(4.1)
.140(3.6)
.700(17.8)
.760(19.3)Max .660(16.8)
+
+
.075(1.9)R.TYP.
_
(2 PLACES)
~ ~+
.185(4.7)
.165(4.2)
45 0
.085(2.2)
.065(1.7)
.455(11.3)
.405(10.3)
1.0(25.4)Min
.220(5.6)
.180(4.6)
.260(6.6)
.180(4.5)
.280(7.1)
.260(6.6)
.205(5.2)
.185(4.7)
.052(1.3)
.048(1.2)
Dimensions in inches and (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current @TA=50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 4.0 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
KBU
8A
VRRM
VRMS
VDC
50
35
50
IF(AV)
KBU
8B
100
70
100
KBU
8D
200
140
200
KBU KBU KBU
8G 8J 8K
400 600 800
280 420 560
400 600 800
8.0
KBU
8M
UNITS
1000
700
1000
V
V
V
A
IFSM
VF
IR
TJ
TSTG
250.0
1.0
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
A
V
μA
mA
www.galaxycn.com
Document Number 0287024
BLGALAXY ELECTRICAL
1.

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