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2SC4924 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC4924
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC4924 fiche technique
INCHANGE Semiconductor
iscwww.DaStaiSlhieceot4Un.coNmPN Power Transistor
isc Product Specification
2SC4924
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1500V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Very high-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
10 A
ICP Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
25 A
3.0
W
70
150
-55~150
isc Websitewww.iscsemi.cn

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